Ballistic electron emission microscopy for nonepitaxial metal/semiconductor interfaces

被引：53

作者：

Smith, DL

Lee, EY

Narayanamurti, V

机构：

[1] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.80.2433

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a model of ballistic electron emission microscopy (BEEM) that includes elastic scattering at nonepitaxial metal/semiconductor interfaces. In the weak scattering limit, the model reduces to the traditional description of BEEM. In the strong scattering limit, the model quantitatively describes (1) the relative magnitudes of BEEM currents into the Gamma, L, and X channels for Au/GaAs(100); (2) the relative magnitudes of the currents for Au/Si(100) and -(111); (3) the relative magnitudes of currents for Au/GaAs and Au/Si; and (4) the absolute magnitudes of the currents for these materials.

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页码：2433 / 2436

页数：4

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