QUANTITATIVE STUDY OF ELECTRON-TRANSPORT IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引：50

作者：

BAUER, A

CUBERES, MT

PRIETSCH, M

KAINDL, G

机构：

[1] Institut für Experimentalphysik, Freie Universität Berlin, W-1000 Berlin 33

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.71.149

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ballistic-electron-emission microscopy (BEEM) of Au and Mg films on n-type GaP(110), with thicknesses as low as 12 angstrom, reveals strong variations of spectral shape and magnitude of the BEEM current with metal-film thickness and surface gradient. Using Monte Carlo simulations, the hot-electron transport between tip and semiconductor can be quantitatively described, providing detailed information on tunneling, transport in the metal, transmission across the interface, and impact ionization in the semi-conductor.

引用

页码：149 / 152

页数：4

共 20 条

[1]

BAUER A, IN PRESS J VAC SCI B

[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].