NOVEL TRANSPORT EFFECTS IN HIGH-BIAS BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY

被引：51

作者：

LUDEKE, R

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.70.214

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Pronounced structure at large biases in the ballistic-electron-emission-microscopy current for Cr/GaP(110) is attributed to density-of-states effects in GaP. Quasielastic scattering at the Cr-GaP interface appears vital for the effect. Impact ionization in the GaP is invoked to explain the unusually large collector currents that can exceed the injected STM tip current.

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页码：214 / 217

页数：4

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