Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility

被引:22
作者
Bisquert, Juan [1 ]
Montero, Jose M.
Bolink, Henk J.
Barea, Eva M.
Garcia-Belmonte, Germa
机构
[1] Univ Jaume 1, Dept Ciencias Expt, Castellon de La Plana 12071, Spain
[2] Univ Valencia, Inst Ciencia Mol, Valencia 46980, Spain
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 15期
关键词
D O I
10.1002/pssa.200622248
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An exact solution is provided for the current density-voltage (J-V) characteristics of space-charge limited transport of a single carrier in organic layers with field-dependent mobility of the type mu(E) = mu(0) exp (gamma root E). The general scaling relationship for field-dependent mobility occurs in terms of the variables JL and V/L. For the density-dependence of the mobility found in organic field-effect transistor measurements, the thickness scaling occurs in terms of different variables, J(1/B)L and V/L. The proposed scaling is a useful test for distinguishing field- and carrier density-dependent mobility in disordered organic semiconductors. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3762 / 3767
页数:6
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