Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility

被引：22

作者：

Bisquert, Juan ^{[1
]}

Montero, Jose M.

Bolink, Henk J.

Barea, Eva M.

Garcia-Belmonte, Germa

机构：

[1] Univ Jaume 1, Dept Ciencias Expt, Castellon de La Plana 12071, Spain

[2] Univ Valencia, Inst Ciencia Mol, Valencia 46980, Spain

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 15期

关键词：

D O I：

10.1002/pssa.200622248

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An exact solution is provided for the current density-voltage (J-V) characteristics of space-charge limited transport of a single carrier in organic layers with field-dependent mobility of the type mu(E) = mu(0) exp (gamma root E). The general scaling relationship for field-dependent mobility occurs in terms of the variables JL and V/L. For the density-dependence of the mobility found in organic field-effect transistor measurements, the thickness scaling occurs in terms of different variables, J(1/B)L and V/L. The proposed scaling is a useful test for distinguishing field- and carrier density-dependent mobility in disordered organic semiconductors. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3762 / 3767

页数：6

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