Hot carrier relaxation in InAs/GaAs quantum dots

被引：12

作者：

Heitz, R

Mukhametzanov, I

Born, H

Grundmann, M

Hoffmann, A

Madhukar, A

Bimberg, D

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Univ So Calif, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 272卷 / 1-4期

关键词：

InAs/GaAs; quantum dots; carrier relaxation; energy transfer;

D O I：

10.1016/S0921-4526(99)00366-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The carrier dynamics in self-organized InAs/GaAs quantum dot (QD) pairs formed in the variable composition amount approach are investigated. Time-resolved photoluminescence measurements as a function of temperature and of the tunnel-barrier thickness demonstrate the influence of slowed-down intradot carrier relaxation in strongly confined systems. In particular, we demonstrate that the carrier-capture efficiency decreases with increasing temperature and find efficient energy transfer between excited states of the QDs. Both effects are attributed to slowed-down carrier-relaxation in the QDs. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：8 / 11

页数：4

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