Nitrogen and oxygen transport and reactions during plasma nitridation of zirconium thin films

Zirconium nitride (ZrN) is a refractory material with good mechanical and thermal properties. It is therefore a good candidate for hard surface treatment at high temperature. In this work, we report the growth and characterization of ZrN by plasma assisted thermal nitridation of zirconium films in a NH3 atmosphere. The process was monitored by in situ monochromatic ellipsometry and the nitrides grown were profiled and analyzed by Auger electron spectroscopy. By using temperatures in the 700-800 degrees C range, the material obtained is quite close to ZrN, but, depending on experimental conditions, residual oxygen (impurities) can be easily incorporated by reaction with zirconium. The analysis of the ellipsometric data has shown that the nitridation did not occur by simple growth of nitride on zirconium. Auger profiles confirmed the presence of an oxidized zirconium layer localized between the nitrided surface and the remaining metal. This oxidation was observed to occur preferentially during temperature ramping, that is, in the low temperature regime. At high temperature, nitridation is dominant and the incorporated oxygen is exchanged with nitrogen. Oxygen is then partly rejected by diffusion out of the film through the ZrN surface layer and partly by diffusion in the deep zirconium sublayer. By using these observations, a new model of growth with a layered ZrN/ZrOx/Zr film was used to describe in situ ellipsometric data. By comparing the pure thermal and the plasma treatments, the advantages of the plasma assisted treatment become clearly: complete nitridation of the zirconium layer was achieved and the oxygen amounts in the film were substantially reduced. (C) 2000 American Institute of Physics. [S0021-8979(00)04401-7].