Microdosimetry code simulation of charge-deposition spectra, single-event upsets and multiple-bit upsets

被引：24

作者：

Dyer, CS

Comber, C

Truscott, PR

Sanderson, C

Underwood, C

Oldfield, M

Campbell, A

Buchner, S

Meehan, T

机构：

[1] DERA, Dept Space, Farnborough GU14 0LX, Hants, England

[2] EDS Def Ltd, Fleet, Hants, England

[3] Univ Surrey, Surrey Space Ctr, Guildford, Surrey, England

[4] USN, Res Lab, Radiat Effects Branch, Washington, DC 20375 USA

[5] USN, Res Lab, SFA Radiat Effects Branch, Washington, DC 20375 USA

[6] USN, Res Lab, Navy Ctr Space Technol, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1109/23.819112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ion microdosimetry extension to the Monte Carlo High Energy Transport Code (HETC) has been developed to allow tracking of all the reaction products and has been applied to model charge-deposition spectra in pin diodes caused by atmospheric neutron spectra, as well as upsets in DRAMs from ground and space irradiation by protons. These cases cover sensitive zone sizes ranging from hundreds of microns to sub-micron. Angular distributions of both incident particles and reaction products are found to be important, particularly for the prediction of multiple-bit upsets in devices of small feature size.

引用

页码：1486 / 1493

页数：8

共 17 条

[1] The effect of the angle of incidence on proton induced single events in devices - A critical assessment by modeling [J].