Role of hole playing in improving performance of organic light-emitting devices with an Al2O3 layer inserted at the cathode-organic interface

被引：54

作者：

Zhang, S. T. ^{[1
]}

Zhou, Y. C. ^{[1
]}

Zhao, J. M. ^{[1
]}

Zhan, Y. Q. ^{[1
]}

Wang, Z. J. ^{[1
]}

Wu, Y. ^{[1
]}

Ding, X. M. ^{[1
]}

Hou, X. Y. ^{[1
]}

机构：

[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ELECTROLUMINESCENCE DEVICES; ELECTRON INJECTION; DIODES; EFFICIENCY; BUFFER; IMPROVEMENT; BRIGHTNESS; ALUMINUM; OXIDE;

D O I：

10.1063/1.2220013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of hole playing in improving electron injection in the presence of an Al2O3 layer at the organic-cathode interface is discussed. It is deduced that, according to the model of tunneling barrier reduction and the carrier transporting mechanism in organic light-emitting devices, electron injection will be enhanced only if holes are injected and accumulated at the organic-buffer interface. The validity of this analysis is well confirmed by experimental results. The observed abnormal characteristic of operating voltage varying with the Al2O3 layer thickness and the efficiency improvement are also well explained by the model. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

[1] Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layers [J].

Deng, ZB ;

Ding, XM ;

Lee, ST ;

Gambling, WA .

APPLIED PHYSICS LETTERS, 1999, 74 (15) :2227-2229

[2] Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode [J].

Hung, LS ;

Tang, CW ;

Mason, MG .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :152-154

[3] Contact formation of LiF/Al cathodes in Alq-based organic light-emitting diodes [J].

Hung, LS ;

Zhang, RQ ;

He, P ;

Mason, G .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (02) :103-107

[4] Improvement of organic light-emitting diodes performance by the insertion of a Si3N4 layer [J].

Jiang, HJ ;

Zhou, Y ;

Ooi, BS ;

Chen, YW ;

Wee, T ;

Lam, YL ;

Huang, JS ;

Liu, SY .

THIN SOLID FILMS, 2000, 363 (1-2) :25-28

[5] ELECTRON AND HOLE MOBILITY IN TRIS(8-HYDROXYQUINALINOLATO-N1,O8) ALUMINUM [J].

KEPLER, RG ;

BEESON, PM ;

JACOBS, SJ ;

ANDERSON, RA ;

SINCLAIR, MB ;

VALENCIA, VS ;

CAHILL, PA .

APPLIED PHYSICS LETTERS, 1995, 66 (26) :3618-3620

[6] Enhanced quantum efficiency in polymer electroluminescence devices by inserting a tunneling barrier formed by Langmuir-Blodgett films [J].

Kim, YE ;

Park, H ;

Kim, JJ .

APPLIED PHYSICS LETTERS, 1996, 69 (05) :599-601

[7]

Kurosaka Y, 2000, ELECTR ENG JPN, V132, P14, DOI 10.1002/1520-6416(200008)132:3<14::AID-EEJ3>3.0.CO

[8]

2-0

[9]

Lampert AM., 1970, CURRENT INJECTION SO, DOI 10.1016/S0080-8784(08)62630-7

[10] Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode [J].

Li, F ;

Tang, H ;

Anderegg, J ;

Shinar, J .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1233-1235

← 1 2 →