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Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes

被引：133
作者：
Park, Min Hyuk
Kim, Han Joon
Kim, Yu Jin
Jeon, Woojin
Moon, Taehwan
Hwang, Cheol Seong [1 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 06期
关键词：
Hf0.5Zr0.5O2; films; TiN electrodes; RuO2; electrodes; endurance switching; ferroelectric capacitors; FATIGUE; MECHANISM;
D O I：
10.1002/pssr.201409017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf0.5Zr0.5O2 films was examined. The TiN/Hf0.5Zr0.5O2/TiN capacitor can endure electric cycling up to 10(9) times, which is promising for the next-generation memory. RuO2 TE was reduced during annealing due to the reactive TiN bottom electrode, resulting in the degradation of the ferroelectric properties and endurance. In addition, the endurance of the TiN/Hf0.5Zr0.5O2/TiN capacitors was optimized by changing the film thickness and the postannealing temperature. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：532 / 535
页数：4
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