Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

Forward density-voltage (J-V) measurements of titanium/4H-SiC Schottky rectifiers are presented in a large temperature range, While some of the devices present a behavior in accordance with the thermionic current theory, others present an excess forward current at low voltage level. This anomaly appears more or less depending on the rectifier and on the temperature, A model based on tno parallel Schottky rectifiers with different barrier heights is presented, The whole characteristics are fitted with good agreement, It is shown that the excess current at low voltage can be explained by a lowering of the Schottky barrier in localized regions, A proposal for the physical origin of these low barrier height areas is given.