A probe of intrinsic valence band electronic structure: Hard x-ray photoemission

被引：87

作者：

Takata, Y ^{[1
]}

Tamasaku, K

Tokushima, T

Miwa, D

Shin, S

Ishikawa, T

Yabashi, M

Kobayashi, K

Kim, JJ

Yao, T

Yamamoto, T

Arita, M

Namatame, H

Taniguchi, M

机构：

[1] RIKEN SPring 8, 1-1-1 Kouto, Mikazuki, Hyogo 6795148, Japan

[2] JASRISPring8, Mikazuki, Hyogo 6795198, Japan

[3] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[4] Kochi Univ Technol, Tosayamada, Kochi 7828502, Japan

[5] Hiroshima Univ, HiSOR, Higashihiroshima 7398526, Japan

[6] Univ Tokyo, ISSP, Chiba 2778581, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 21期

关键词：

D O I：

10.1063/1.1756209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hard x-ray valence band photoemission spectroscopy (PES) is realized using high-energy and high-brilliance synchrotron radiation. High-energy (similar to6 keV) excitation results in larger probing depths of photoelectrons compared to conventional PES, and enables a study of intrinsic electronic property of materials in actual device structures much less influenced by surface condition. With this technique, requirements for surface preparation are greatly reduced, if not eliminated. It is a nondestructive tool to determine electronic structure from surface to genuine bulk as shown by a study on SiO2/Si(100). Electronic structure modification related to the ferromagnetism in the diluted magnetic semiconductor Ga0.96Mn0.04N is also observed. (C) 2004 American Institute of Physics.

引用

页码：4310 / 4312

页数：3

共 11 条

[1] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
Dietl, T
Ohno, H
Matsukura, F
Cibert, J
Ferrand, D
[J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
[2] Hufner S., 1995, Photoelectron Spectroscopy, VVolume 82
[3] Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates
Kim, JJ
Makino, H
Chen, PP
Suzuki, T
Oh, DC
Ko, HJ
Chang, JH
Hanada, T
Yao, T
[J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2869 - 2873
[4] INSERTION DEVICES FOR 3RD-GENERATION LIGHT-SOURCES (INVITED)
KITAMURA, H
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (02) : 2007 - 2010
[5] Recent trends of insertion-device technology for X-ray sources
Kitamura, H
[J]. JOURNAL OF SYNCHROTRON RADIATION, 2000, 7 (03) : 121 - 130
[6] High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems
Kobayashi, K
Yabashi, M
Takata, Y
Tokushima, T
Shin, S
Tamasaku, K
Miwa, D
Ishikawa, T
Nohira, H
Hattori, T
Sugita, Y
Nakatsuka, O
Sakai, A
Zaima, S
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (05) : 1005 - 1007
[7] X-RAY PHOTOEMISSION SPECTROSCOPY
LINDAU, I
PIANETTA, P
DONIACH, S
SPICER, WE
[J]. NATURE, 1974, 250 (5463) : 214 - 215
[8] Probing bulk states of correlated electron systems by high-resolution resonance photoemission
Sekiyama, A
Iwasaki, T
Matsuda, K
Saitoh, Y
Onuki, Y
Suga, S
[J]. NATURE, 2000, 403 (6768) : 396 - 398
[9] SPring-8 RIKEN beamline III for coherent X-ray optics
Tamasaku, K
Tanaka, Y
Yabashi, M
Yamazaki, H
Kawamura, N
Suzuki, M
Ishikawa, T
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 467 : 686 - 689
[10] ATOMIC SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AND ASYMMETRY PARAMETERS - 1 LESS-THAN-OR-EQUAL-TO Z LESS-THAN-OR-EQUAL-TO 103
YEH, JJ
LINDAU, I
[J]. ATOMIC DATA AND NUCLEAR DATA TABLES, 1985, 32 (01) : 1 - 155

← 1 2 →