Electroluminescence of a cubic GaN/GaAs (001) p-n junction

被引：52

作者：

As, DJ ^{[1
]}

Richter, A ^{[1
]}

Busch, J ^{[1
]}

Lübbers, M ^{[1
]}

Mimkes, J ^{[1
]}

Lischka, K ^{[1
]}

机构：

[1] Univ Gesamthsch Paderborn, FB Phys 6, D-33095 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.125640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A cubic GaN p-n diode has been grown on n-type GaAs (001) substrates by plasma assisted molecular epitaxy. For p- and n-type doping, elemental Mg and Si beams have been used, respectively. The optical properties are characterized by photoluminescence at room temperature and 2 K. Current-voltage and capacitance-voltage measurements of the cubic GaN n(+)-p junction are performed at room temperature. The electroluminescence at 300 K is measured through a semitransparent Au contact. A peak emission at 3.2 eV with a full width at half maximum as narrow as 150 meV is observed, indicating that near-band edge transitions are the dominating recombination processes in our device. A linear increase of the electroluminescence intensity with increasing current density is measured. (C) 2000 American Institute of Physics. [S0003-6951(00)03801-8].

引用

页码：13 / 15

页数：3

共 26 条

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