Model of the bias-enhanced nucleation of diamond on silicon based on atomic force microscopy and x-ray-absorption studies

被引：20

作者：

García, MM ^{[1
]}

Jiménez, I ^{[1
]}

Sánchez, O ^{[1
]}

Gómez-Aleixandre, C ^{[1
]}

Vázquez, L ^{[1
]}

机构：

[1] CSIC, Inst Cienica Mat, E-28049 Madrid, Spain

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.61.10383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The bias-enhanced nucleation of diamond on Si during microwave plasma assisted chemical vapor deposition has been studied by surface sensitive techniques like x-ray-absorption near-edge spectroscopy and atomic force microscopy. It has been observed that the nuclei growth starts on top of a graphitic layer, which contains basal planes oriented perpendicular to the surface. The preferential orientation is likely due to the stress produced by ion bombardment during the deposition. The surface termination of the oriented planes can be associated with active sites in the diamond nucleation process. Formation of SiC at the surface does not seem related to diamond nucleation. The nuclei grow mainly at the expense of carbonaceous adsorbates diffusing on the surface, in a process competitive with the formation of oriented graphitic material and new diamond nuclei.

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页码：10383 / 10387

页数：5

相关论文

共 20 条

[1] X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films [J].

Garcia, MM ;

Jimenez, I ;

Vazquez, L ;

Gomez-Aleixandre, C ;

Albella, JM ;

Sanchez, O ;

Terminello, LJ ;

Himpsel, FJ .

APPLIED PHYSICS LETTERS, 1998, 72 (17) :2105-2107

[2] Role of surface diffusion processes during bias-enhanced nucleation of diamond on Si [J].

Gerber, J ;

Robertson, J ;

Sattel, S ;

Ehrhardt, H .

DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) :261-265

[3] Nanosize diamond formation promoted by direct current glow discharge process: Synchrotron radiation and high resolution electron microscopy studies [J].

Gouzman, I ;

Hoffman, A ;

Comtet, G ;

Hellner, L ;

Dujardin, G ;

Petravic, M .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2517-2519

[4] NUCLEATION AND INITIAL GROWTH-PHASE OF DIAMOND THIN-FILMS ON (100)-SILICON [J].

JIANG, X ;

SCHIFFMANN, K ;

KLAGES, CP .

PHYSICAL REVIEW B, 1994, 50 (12) :8402-8410

[5] Photoemission and x-ray-absorption study of boron carbide and its surface thermal stability [J].

Jimenez, I ;

Sutherland, DGJ ;

van Buuren, T ;

Carlisle, JA ;

Terminello, LJ ;

Himpsel, FJ .

PHYSICAL REVIEW B, 1998, 57 (20) :13167-13174

[6] Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study [J].

Jimenez, I ;

Garcia, MM ;

Albella, JM ;

Terminello, LJ .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2911-2913

[7] Structural investigation of the bias-enhanced nucleation and growth of diamond films by microwave plasma chemical vapor deposition [J].

Kim, DG ;

Seong, TY ;

Baik, YJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (06) :2095-2100

[8]

Liu H., 1995, DIAMOND CHEM VAPOR D, V1st ed.

[9] Low-pressure transformation of graphite to diamond under irradiation [J].

Lyutovich, Y ;

Banhart, F .

APPLIED PHYSICS LETTERS, 1999, 74 (05) :659-660

[10] Observation of diamond nanocrystals in carbon films deposited during ion-assisted microwave plasma nucleation pretreatments [J].

McGinnis, SP ;

Kelly, MA ;

Hagstrom, SB ;

Alvis, RL .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :170-174