Radio-Frequency Electrical Characteristics of Single Layer Graphene

被引：36

作者：

Jeon, Dae-Young ^{[1
]}

Lee, Kook Joo ^{[2
]}

Kim, Moonil ^{[2
]}

Kim, Dong Chul ^{[1
]}

Chung, Hyun-Jong ^{[1
]}

Woo, Yun-Sung ^{[1
]}

Seo, Sunae ^{[1
]}

机构：

[1] Samsung Elect, Semicond Lab, Samsung Adv Inst Technol, Gyeonggi Do 446712, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 09期

关键词：

INTERCONNECTS; NANOTUBES;

D O I：

10.1143/JJAP.48.091601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The radio-frequency (RF) electrical response of monolayer graphene is reported. From the measured S-parameter in the range of 10 MHz to 50 GHz, a simple equivalent resistor-inductor-capacitor (R-L-C) circuit is established to analyze frequency impedance. The impedance magnitude shows significant frequency dependence only below 10 GHz and this dispersive behavior is originated from the graphene-metal contact. Above 10 GHz, there is no distinctive change in overall characteristic of impedance due to the absence of the skin effect and low intrinsic kinetic inductance of graphene. These results show that graphene could be a promising candidate for high-speed device application. (C) 2009 The Japan Society of Applied Physics

引用

页码：0916011 / 0916013

页数：3

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