Formation of AlN films by Al evaporation with nitrogen ion beam bombardment

被引：20

作者：

He, XJ ^{[1
]}

Yang, SZ ^{[1
]}

Tao, K ^{[1
]}

Fan, YD ^{[1
]}

机构：

[1] TSING HUA UNIV,DEPT MAT SCI & ENGN,BEIJING 100084,PEOPLES R CHINA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 51卷 / 02期

基金：

中国国家自然科学基金;

关键词：

aluminum nitride films; ion beam assisted deposition (IBAD);

D O I：

10.1016/S0254-0584(97)80295-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum nitride films were synthesized by electron gun evaporation of aluminum on to Si(111) wafer with simultaneous bombardment by nitrogen ions. Under special conditions, polycrystalline AlN films of fine crystallinity were obtained. (C) 1997 Elsevier Science S.A.

引用

页码：199 / 201

页数：3

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