ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS AT 200-250-DEGREES C

被引：43

作者：

GORDON, RG

HOFFMAN, DM

RIAZ, U

机构：

[1] Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138

来源：

JOURNAL OF MATERIALS RESEARCH | 1991年 / 6卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1991.0005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings using hexakis(dimethylamido)dialuminum, Al2(NMe2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. The films were deposited at 200-250-degrees-C with growth rates up to 1000 Angstrom/min. They displayed good adhesion to silicon, vitreous carbon, and glass substrates and were chemically inert, except to concentrated hydrofluoric acid. Rutherford backscattering analysis showed that the N/Al ratio ranged from 1.1 to 1.2. Refractive indexes were 1.8-1.9. The films were smooth and amorphous by transmission electron microscopy.

引用

页码：5 / 7

页数：3

共 16 条

[1] Organometallic Azides as Precursors for Aluminum Nitride Thin Films [J].