Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

被引：53

作者：

Crupi, F. ^{[1
]}

Srinivasan, P.

Magnone, P.

Simoen, E.

Pace, C.

Misra, D.

Claeys, C.

机构：

[1] Univ Calabria, Dipartimento Elettron Informat & Sistemist, I-87036 Arcavacata Di Rende, CS, Italy

[2] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

[3] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

[4] Interuniv MicroElect Ctr, IMEC, B-3001 Louvain, Belgium

[5] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 08期

关键词：

high-kappa gate dielectrics; Hooge's parameter; interfacial layer; low-frequency (LF) noise; metal gates; mobility fluctuations;

D O I：

10.1109/LED.2006.879028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-kappa, gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of IN noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-kappa, layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.

引用

页码：688 / 691

页数：4

共 13 条

[1] IMPROVED ANALYSIS OF LOW-FREQUENCY NOISE IN FIELD-EFFECT MOS-TRANSISTORS [J].

GHIBAUDO, G ;

ROUX, O ;

NGUYENDUC, C ;

BALESTRA, F ;

BRINI, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (02) :571-581

[2] Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics [J].

Giusi, G ;

Crupi, F ;

Pace, C ;

Ciofi, C ;

Groeseneken, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) :823-828

[3]

Groeseneken G, 2004, IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, P147

[4] 1/F NOISE SOURCES [J].

HOOGE, FN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1926-1935

[5]

Houssa M., 2003, HIGH KAPPA GATE DIEL

[6]

HUFF HR, 2005, HIGH DIELECTRIC CONS

[7] A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

HUNG, KK ;

KO, PK ;

HU, CM ;

CHENG, YC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :654-665

[8] A 1/F NOISE TECHNIQUE TO EXTRACT THE OXIDE TRAP DENSITY NEAR THE CONDUCTION-BAND EDGE OF SILICON [J].

JAYARAMAN, R ;

SODINI, CG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1773-1782

[9] Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks [J].

Min, BG ;

Devireddy, SP ;

Çelik-Butler, Z ;

Wang, F ;

Zlotnicka, A ;

Tseng, HH ;

Tobin, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (10) :1679-1687

[10]

Ragnarsson LÅ, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P87

← 1 2 →