High pressure synthesis and properties of intercalated silicon clathrates

被引:30
作者
Toulemonde, P.
San Miguel, A.
Merlen, A.
Viennois, R.
Le Floch, S.
Adessi, Ch.
Blase, X.
Tholence, J. L.
机构
[1] Univ Lyon 1, LPMCN, F-69622 Villeurbanne, France
[2] CNRS, F-69622 Villeurbanne, France
[3] CNRS, LEPES, F-38042 Grenoble 09, France
关键词
fullerenes and related materials; chemical synthesis; high pressure; superconductivity;
D O I
10.1016/j.jpcs.2006.01.077
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
yIn this paper, we review the synthesis of intercalated silicon clathrates and their physical properties. More particularly, their high pressure-high temperature synthesis and their superconductivity properties are detailed. Si-clathrates are cage-structures allowing for the ultra-degenerated intercalation of donor or acceptor atoms. Their physical properties are both governed by the sp(3) tetrahedral bonding and by the guest-host interactions. The endohedral intercalation gives rise to the observation of a number of unique behaviors like their extreme high pressure stability as well as their unique type of isostructural phase transformations. Three types of Si-clathrates exist corresponding to different stoichiometries: type-I M8Si46 (With M=Na, K, Rb Ba, Sr, Ca or I), type-II MxSi136 with M=Na or Cs and type-III Ba24Si100 (sp(2)/sp(3) System). The Si-clathrates are phonon-mediated BCS superconductors. Only type-I and type-III are superconducting with critical temperatures ranging from T-c = 1.55 K (Ba24Si100) to 8 K (Ba8Si46). In the type-I, superconductivity is an intrinsic property of the sp(3) silicon network. When Ba is replaced by Sr or Ca, the electronic density of states at the Fermi level decreases, involving the reduction of T-c. For Ba24Si100, the importance of the mixed sp(2)/sp(3) character of the Si-bonds in the explanation of its lower Tc is still under debate. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1117 / 1121
页数:5
相关论文
共 25 条
[1]   Exceptional ideal strength of carbon clathrates -: art. no. 215505 [J].
Blase, X ;
Gillet, P ;
San Miguel, A ;
Mélinon, P .
PHYSICAL REVIEW LETTERS, 2004, 92 (21) :215505-1
[2]   Superconductivity in doped sp3 semiconductors:: The case of the clathrates -: art. no. 247001 [J].
Connétable, D ;
Timoshevskii, V ;
Masenelli, B ;
Beille, J ;
Marcus, J ;
Barbara, B ;
Saitta, AM ;
Rignanese, GM ;
Mélinon, P ;
Yamanaka, S ;
Blase, X .
PHYSICAL REVIEW LETTERS, 2003, 91 (24)
[3]  
CROS C, 1965, CR HEBD ACAD SCI, V260, P4764
[4]  
Cros C., 1970, J SOLID STATE CHEM, V2, P570, DOI [DOI 10.1016/0022-4596(70)90053-8, 10.1016/0022-4596(70)90053-8]
[5]   Preparation and structure of a new germanium clathrate, Ba24Ge100 [J].
Fukuoka, H ;
Iwai, K ;
Yamanaka, S ;
Abe, H ;
Yoza, K ;
Häming, L .
JOURNAL OF SOLID STATE CHEMISTRY, 2000, 151 (01) :117-121
[6]   High-pressure synthesis and structure of a new silicon clathrate Ba24Si100 [J].
Fukuoka, H ;
Ueno, K ;
Yamanaka, S .
JOURNAL OF ORGANOMETALLIC CHEMISTRY, 2000, 611 (1-2) :543-546
[7]   Low-density framework form of crystalline silicon with a wide optical band gap [J].
Gryko, J ;
McMillan, PF ;
Marzke, RF ;
Ramachandran, GK ;
Patton, D ;
Deb, SK ;
Sankey, OF .
PHYSICAL REVIEW B, 2000, 62 (12) :R7707-R7710
[8]   Structural trends and chemical bonding in Te-doped silicon clathrates [J].
Jaussaud, N ;
Pouchard, M ;
Gravereau, P ;
Pechev, S ;
Goglio, G ;
Cros, C ;
San Miguel, A ;
Toulemonde, P .
INORGANIC CHEMISTRY, 2005, 44 (07) :2210-2214
[9]   High pressure synthesis and crystal structure of two forms of a new tellurium-silicon clathrate related to the classical type I [J].
Jaussaud, N ;
Toulemonde, P ;
Pouchard, M ;
San Miguel, A ;
Gravereau, P ;
Pechev, S ;
Goglio, G ;
Cros, C .
SOLID STATE SCIENCES, 2004, 6 (05) :401-411
[10]   CLATHRATE STRUCTURE OF SILICON AND NAXSI136 (X[11) [J].
KASPER, JS ;
HAGENMULLER, P ;
POUCHARD, M ;
CROS, C .
SCIENCE, 1965, 150 (3704) :1713-+