Atomic-resolution three-dimensional imaging of germanium self-interstitials near a surface: Aberration-corrected transmission electron microscopy

被引：33

作者：

Alloyeau, D. ^{[1
]}

Freitag, B. ^{[2
]}

Dag, S. ^{[3
]}

Wang, Lin W. ^{[3
]}

Kisielowski, C. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

[2] FEI Co, NL-5600 KA Eindhoven, Netherlands

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Sci Comp Grp, Computat Res Div, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 01期

关键词：

elemental semiconductors; germanium; interstitials; transmission electron microscopy; TOTAL-ENERGY CALCULATIONS; IRRADIATION-INDUCED DEFECTS; INTRINSIC POINT-DEFECTS; AB-INITIO; MOLECULAR-DYNAMICS; SEMICONDUCTORS; IDENTIFICATION; VACANCIES; GE;

D O I：

10.1103/PhysRevB.80.014114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the formation and direct observation of self-interstitials in surface proximity of an elemental semiconductor by exploiting subthreshold effects in a new generation of aberration-corrected transmission electron microscopes. We find that the germanium interstitial atoms reside close to hexagonal, tetragonal, and S-interstitial sites. Using phase-contrast microscopy, we demonstrate that the three-dimensional position of interstitial atoms can be determined from contrast analysis, with subnanometer precision along the electron-beam direction. Comparison with a first-principles study suggests a strong influence of the surface proximity or a positively charged interstitial. More generally, our investigation demonstrates that imaging of single atom can now be utilized to directly visualize single-defect formation and migration. These high-resolution electron microscopy studies are applicable to a wide range of materials since the reported noise level of the images even allows the detection of single-light atoms.

引用

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