THE MIGRATION OF SELF-INTERSTITIALS IN GERMANIUM

被引:14
作者
KHOO, GS
ONG, CK
机构
[1] Nat Univ of Singapore, Singapore
关键词
defects in Ge; Diffusion; semiconductors;
D O I
10.1016/0022-3697(90)90098-Z
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Molecular clusters of varying sizes from 65 to 82 atoms were used in the self-consistent semi-empirical molecular orbital method to calculate the total energies for the different interstitial configurations at different charge states of Ge. Relaxations were made for each calculation so that the most stable configurations were obtained. We found that the possible diffusion path for the positively charged interstitial is THT with a barrier height of 2 eV. The preferred diffusion path for neutral and negatively charged states is XTX with barrier heights varying from 0.58 to 1.45 eV. The Bourgoin-Corbett mechanism is found to be possible for p-type Ge. © 1990.
引用
收藏
页码:1177 / 1179
页数:3
相关论文
共 10 条
[1]   SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1984, 30 (04) :2216-2218
[2]   NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].
BOURGOIN, JC ;
CORBETT, JW .
PHYSICS LETTERS A, 1972, A 38 (02) :135-&
[3]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817
[4]   PHYSICS OF ULTRA-PURE GERMANIUM [J].
HALLER, EE ;
HANSEN, WL ;
GOULDING, FS .
ADVANCES IN PHYSICS, 1981, 30 (01) :93-138
[5]  
HARKER AH, 1979, AERE R8598 HARW REP
[6]   THE NATURE OF THE CHARGED SELF-INTERSTITIAL IN SILICON [J].
KHOO, GS ;
ONG, CK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (31) :5037-5043
[7]   INTERSTITIAL HYDROGEN IN CRYSTALLINE GERMANIUM [J].
KHOO, GS ;
ONG, CK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (10) :1385-1392
[8]   NATURE AND DIFFUSION OF THE SELF-INTERSTITIAL IN SILICON [J].
MASRI, P ;
HARKER, AH ;
STONEHAM, AM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (18) :L613-L616
[9]  
MURCH GE, 1984, DIFFUSION CRYSTAL MS, P88
[10]   DETERMINATION OF CNDO PARAMETERS FOR GERMANIUM AND THEIR APPLICATION TO SIMPLE GERMANIUM MOLECULES [J].
ONG, CK ;
KHOO, GS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (08) :883-886