THE NATURE OF THE CHARGED SELF-INTERSTITIAL IN SILICON

被引：16

作者：

KHOO, GS

ONG, CK

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 31期

关键词：

D O I：

10.1088/0022-3719/20/31/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5037 / 5043

页数：7

共 15 条

[1] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[2] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979

[3] SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1984, 30 (04) :2216-2218

[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562

[5] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].

BOURGOIN, JC ;

CORBETT, JW .

PHYSICS LETTERS A, 1972, A 38 (02) :135-&

[6] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

[7]

HARKER AH, 1979, J PHYS C, V12, P2479

[8]

HARKER AH, 1979, AERE R8598 AT EN RES

[9]

Hayes W., 1985, DEFECTS DEFECT PROCE

[10] INTERSTITIAL HYDROGEN IN CRYSTALLINE GERMANIUM [J].

KHOO, GS ;

ONG, CK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (10) :1385-1392

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