Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors

被引：13

作者：

Dattoli, Eric N. ^{[1
]}

Kim, Kuk-Hwan ^{[1
]}

Fung, Wayne Y. ^{[1
]}

Choi, Seok-Youl ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48105 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 07期

基金：

美国国家科学基金会;

关键词：

Nanowire (NW); semiconductor materials; thin-film transistor (TFT); transparent devices; OXIDE; FABRICATION; DEVICES;

D O I：

10.1109/LED.2009.2021167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, radio-frequency characterization of fully transparent thin-film transistors (TFTs) based on chemically synthesized nanowires (NWs) has been carried out. The NW TFTs show current-gain cutoff frequency f(T) of 10.9 MHz and power-gain cutoff frequency f(max) of 286 MHz. The TFTs were fabricated on glass substrates using aligned SnO2 NWs as the transistor channel and sputtered indium-tin-oxide films as the source-drain and gate electrodes. Besides exhibiting > 100-MHz operation frequencies, the transparent NW TFTs show a narrow distribution of performance metrics among different devices. These results suggest the NW-TFT approach may be promising for high-speed transparent and flexible integrated circuits fabricated on diverse substrates.

引用

页码：730 / 732

页数：3

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