Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

被引:481
作者
Ju, Sanghyun
Facchetti, Antonio
Xuan, Yi
Liu, Jun
Ishikawa, Fumiaki
Ye, Peide
Zhou, Chongwu
Marks, Tobin J.
Janes, David B.
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Ctr Mat Res, Evanston, IL 60208 USA
[3] Northwestern Univ, Inst Nanoelect & Comp, Evanston, IL 60208 USA
[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[5] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[6] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
基金
美国国家航空航天局;
关键词
D O I
10.1038/nnano.2007.151
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with similar to 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.
引用
收藏
页码:378 / 384
页数:7
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