p-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed lase deposition

被引：2

作者：

Chakrabarti, S. ^{[1
]}

Doggett, B. ^{[1
]}

O'Haire, R. ^{[1
]}

McGlynn, E. ^{[1
]}

Henry, M. O. ^{[1
]}

Meaney, A. ^{[1
]}

Mosnier, J. -P. ^{[1
]}

机构：

[1] Dublin City Univ, Sch Phys Sci, Ctr Plasma Sci & Technol, Dublin 9, Ireland

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 20期

关键词：

D O I：

10.1049/el:20062161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Nitrogen-doped ZnO thin films were deposited using the pulsed laser deposition technique. The epitaxial ZnO films were p-type in the measured temperature range 200-450 K, with hole concentrations and mobilities of 9.6 x 10(15) cm(-3) and 10.8 cm(2)/V-s, respectively, at room temperature. The films remained p-type under conditions of changing illumination. This result represents a step towards realisation of ZnO-based optoelectronic devices for high-temperature operation.

引用

页码：1181 / 1183

页数：3

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