Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation

被引：7

作者：

Akagi, Y

Hanamoto, K

Suzuki, H

Katoh, T

Sasaki, M

Imai, S

Tsudagawa, M

Nakayama, Y

Miki, H

机构：

[1] Ritsumeikan Univ, Kusatsu 5258577, Japan

[2] Sumitomo Heavy Ind Ltd, Tanashi, Tokyo 4418585, Japan

[3] Ind Res Ctr Shiga Prefecture, Shiga 5203004, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 12A期

关键词：

indium-tin-oxide; ITO; transparent conductive film; ablation; synchrotron radiation; photo-excited process;

D O I：

10.1143/JJAP.38.6846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-transparency, low-electrical-resistivity indium-tin-oxide (ITO) thin films were prepared on quartz substrates using synchrotron radiation ablation at room temperature. The films had a low resistivity (rho = 1.3 x 10(-4) Omega-cm) and high-transparency properties in the visible region (T = 83% at 550nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.

引用

页码：6846 / 6850

页数：5

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