High-rate anisotropic ablation and deposition of polytetrafluoroethylene using synchrotron radiation process

被引：30

作者：

Inayoshi, M

Ikeda, M

Hori, M

Goto, T

Hiramatsu, M

Hiraya, A

机构：

[1] MEIJO UNIV, DEPT ELECT & ELECTR ENGN, TEMPAKU KU, NAGOYA, AICHI 468, JAPAN

[2] INST MOLEC SCI, MYODAIJI, AICHI 444, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 12B期

关键词：

synchrotron radiation; PTFE; ablation; deposition; micromachining;

D O I：

10.1143/JJAP.34.L1675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both anisotropic ablation and thin him formation of polytetrafluoroethylene (PTFE) were successfully demonstrated using synchrotron radiation (SR) irradiation of PTFE, that is, the SR ablation process. Anisotropic ablation by the SR irradiation was performed at an extremely high rate of 3500 mu m/min at a PTFE target temperature of 200 degrees C. Moreover, a PTFE thin film was formed at a high rate of 2.6 mu m/min using SR ablation of PTFE. The chemical structure of the deposited him was similar to that of the PTFE target as determined from Fourier transform infrared absorption spectroscopy (FT-IR) analysis.

引用

页码：L1675 / L1677

页数：3

共 13 条

[1]

Becker E. W., 1986, Microelectronic Engineering, V4, P35, DOI 10.1016/0167-9317(86)90004-3

[2] DEPOSITION OF POLYTETRAFLUOROETHYLENE FILMS BY LASER ABLATION [J].