Oxygen plasma effects on sol-gel-derived lead-zirconate-titanate thin films

被引：26

作者：

Jang, HK

Lee, SK

Lee, CE ^{[1
]}

Noh, SJ

Lee, WI

机构：

[1] Korea Univ, Dept Phys, Seoul 136701, South Korea

[2] Dankook Univ, Dept Appl Phys, Seoul 140714, South Korea

[3] Inha Univ, Dept Chem, Inchon 402751, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied effects of oxygen plasma treatment on the ferroelectric Pb(Zr-x,Ti1-x)O-3 (PZT) films prepared by a sol-gel method. Electrical characteristics of the films were found to be improved considerably by exposure to the O-2 plasma, with enhanced remanent polarization and decreased leakage current densities. Chemical bonding analysis by means of x-ray photoelectron spectroscopy in the Pb 4f region indicated that the intensity from the perovskite PZT phase increased considerably after the O-2 plasma treatment, giving rise to the improved performances of the PZT films. (C) 2000 American Institute of Physics. [S0003-6951(00)03107-7].

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页码：882 / 884

页数：3

相关论文

共 24 条

[1] Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors [J].

Aggarwal, S ;

Perusse, SR ;

Tipton, CW ;

Ramesh, R ;

Drew, HD ;

Venkatesan, T ;

Romero, DB ;

Podobedov, VB ;

Weber, A .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :1973-1975

[2] FATIGUE CHARACTERISTICS OF SOL-GEL DERIVED PB(ZR, TI)O-3 THIN-FILMS [J].

AMANUMA, K ;

HASE, T ;

MIYASAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5211-5214

[3]

[Anonymous], 1994, FERROELECTRICS, DOI DOI 10.1080/00150199408017591

[4] ELECTRON-SPIN-RESONANCE STUDY OF HYDROGENATION EFFECTS IN POLYCRYSTALLINE SILICON [J].

BALLUTAUD, D ;

AUCOUTURIER, M ;

BABONNEAU, F .

APPLIED PHYSICS LETTERS, 1986, 49 (23) :1620-1622

[5] Improvement of leakage current characteristics of Ba0.5Sr0.5TiO3 films by N2O plasma surface treatment [J].

Cho, HJ ;

Oh, SJ ;

Kang, CS ;

Hwang, CS ;

Lee, BT ;

Lee, KH ;

Horii, H ;

Lee, SI ;

Lee, MY .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3221-3223

[6] Densification of radio frequency sputtered silicon oxide films by rapid thermal annealing [J].

Choi, WK ;

Choo, CK ;

Han, KK ;

Chen, JH ;

Loh, FC ;

Tan, KL .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2308-2314

[7] Investigation of etch profiles in etching of PZT and Pt thin films [J].

Chung, CW ;

Song, IY ;

Lee, JS .

FERROELECTRIC THIN FILMS VI, 1998, 493 :119-129

[8] FERROELECTRIC MEMORIES [J].

DEARAUJO, CAP ;

MCMILLAN, LD ;

MELNICK, BM ;

CUCHIARO, JD ;

SCOTT, JF .

FERROELECTRICS, 1990, 104 :241-256

[9] Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O-3 and SrBi2Ta2O9 thin films [J].

Han, JP ;

Ma, TP .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1267-1269

[10] Low temperature crystallization of lead zirconate titanate thin films by a sol-gel method [J].

Huang, Z ;

Zhang, Q ;

Whatmore, RW .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7355-7361