Atomistic simulation and analysis of plasticity in amorphous silicon

被引：31

作者：

Argon, AS

Demkowicz, MJ

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[2] Los Alamos Natl Lab, Los Alamos, NM USA

来源：

PHILOSOPHICAL MAGAZINE | 2006年 / 86卷 / 25-26期

关键词：

D O I：

10.1080/14786430600596852

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The principal findings of a comprehensive computational simulation of plastic flow in amorphous Si - presented elsewhere in detail - are summarized. The unit plastic events have been identified to consist of discrete shear transformations triggered at characteristic thresholds of stress that result in transformation shear strains of about 0.015. Based on these findings, a kinetic model of plastic flow is proposed that provides for the temperature dependence of the plastic flow resistance and explains the evolution of a unique flow state starting from different amorphous structures. It is proposed that these findings should be broadly applicable to other strongly bonded glassy covalent compounds.

引用

页码：4153 / 4172

页数：20

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