Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene

被引：129

作者：

Robinson, Joshua A. ^{[1
,3
]}

Puls, Conor P. ^{[2
]}

Staley, Neal E. ^{[2
,3
]}

Stitt, Joseph P.

Fanton, Mark A. ^{[1
]}

Emtsev, Konstantin V. ^{[4
]}

Seyller, Thomas ^{[4
]}

Liu, Ying ^{[2
,3
]}

机构：

[1] Penn State Univ, Ctr Electroopt, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[4] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

来源：

NANO LETTERS | 2009年 / 9卷 / 03期

关键词：

SCATTERING; FILMS; LAYER;

D O I：

10.1021/nl802852p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report results of Raman spectroscopy studies of large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large variation in Raman shift resulting from graphene strain inhomogeneity, which is shown to be correlated with physical topography by coupling Raman spectroscopy with atomic force microscopy. We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 mu m. We show that nearly strain-free graphene is possible even in epitaxial graphene.

引用

页码：964 / 968

页数：5

共 18 条

[1] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[2] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[3] Epitaxial graphene [J].

de Heer, Walt A. ;

Berger, Claire ;

Wu, Xiaosong ;

First, Phillip N. ;

Conrad, Edward H. ;

Li, Xuebin ;

Li, Tianbo ;

Sprinkle, Michael ;

Hass, Joanna ;

Sadowski, Marcin L. ;

Potemski, Marek ;

Martinez, Gerard .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :92-100

[4] Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study [J].

Emtsev, K. V. ;

Speck, F. ;

Seyller, Th. ;

Ley, L. ;

Riley, J. D. .

PHYSICAL REVIEW B, 2008, 77 (15)

[5] Few-layer graphene on SiC, pyrolitic graphite, and graphene:: A Raman scattering study [J].

Faugeras, C. ;

Nerriere, A. ;

Potemski, M. ;

Mahmood, A. ;

Dujardin, E. ;

Berger, C. ;

de Heer, W. A. .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[6] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[7] High-temperature graphitization of the 6H-SiC (000(1)over-bar) face [J].

Forbeaux, I ;

Themlin, JM ;

Debever, JM .

SURFACE SCIENCE, 1999, 442 (01) :9-18

[8] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[9] Spatially resolved raman spectroscopy of single- and few-layer graphene [J].

Graf, D. ;

Molitor, F. ;

Ensslin, K. ;

Stampfer, C. ;

Jungen, A. ;

Hierold, C. ;

Wirtz, L. .

NANO LETTERS, 2007, 7 (02) :238-242

[10] Raman scattering from high-frequency phonons in supported n-graphene layer films [J].

Gupta, A. ;

Chen, G. ;

Joshi, P. ;

Tadigadapa, S. ;

Eklund, P. C. .

NANO LETTERS, 2006, 6 (12) :2667-2673

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