Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy

被引：6

作者：

Hasegawa, Y

Akiyama, K

Ono, M

Kahng, SJ

Xue, QK

Nakayama, K

Hashizume, T

Sakurai, T

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan

[3] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension. (C) 1999 American Institute of Physics. [S0003-6951(99)02849-1].

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页码：3668 / 3670

页数：3

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