A theoretical investigation of stable lattice sites for In adatoms on GaAs(001)-(2x4) surface

被引：14

作者：

Ito, T ^{[1
]}

Shiraishi, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11B期

关键词：

GaAs(001); (2x4)beta 2 surface; step; Schwoebel barriers; In adatom; migration potential; empirical interatomic potential; electron counting model;

D O I：

10.1143/JJAP.36.L1525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stable lattice sites of In adatoms on the GaAs(001)-(2 x 4)beta 2 surface are qualitatively investigated using empirical interatomic potential and an energy term as a function of the number of electrons remaining in the cation dangling bonds. The calculated results imply that the lattice sites in the missing dimer row are favorable for In adatoms on the GaAs(001)-(2 x 4)beta 2 surface, since the formation of Ga-In dimers suppresses the number of electrons remaining in the cation dangling bonds. Lattice sites in the missing dimer row near the B-type step edge are stable for an In adatom. This creates Schwoebel barriers at the B-type step edge. However, no preferential adsorption sites are found near A-type step edges. These results are comparable with the results on Ga adatoms we obtained in our previous study.

引用

页码：L1525 / L1527

页数：3

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