Misfit dislocations of epitaxial (110) niobium∥ (11(2)over-bar-0) sapphire interfaces grown by molecular beam epitaxy

被引：26

作者：

Grier, EJ

Jenkins, ML

Petford-Long, AK

Ward, RCC

Wells, MR

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

THIN SOLID FILMS | 2000年 / 358卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

electron microscopy; interfaces; molecular beam epitaxy; niobium;

D O I：

10.1016/S0040-6090(99)00675-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High resolution electron microscopy, HREM, of(110)(Nb)parallel to(<11(2)over bar 0>)(Al2O3) interfaces grown by molecular beam epitaxy, MBE, has confirmed that the interface is semicoherent for the films investigated, and that for this orientation misfit dislocations occur at the interface both with and without stand-off from the interface. The dislocation networks have been identified by conventional transmission electron microscopy, CTEM, to be composed of misfit dislocations with a Burgers vector of 1/2[111], which corresponds to the Burgers vector of bulk dislocations in Nb. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：94 / 98

页数：5

共 14 条

[1] Analysis of the shortcomings of the Matthews-Blakeslee theory of critical thickness at higher strains [J].