Annealing effect for structural morphology of ZnO film on SiO2 substrates

被引:71
作者
Kim, HW [1 ]
Kim, NH [1 ]
机构
[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea
关键词
thin films; sputtering; structural properties;
D O I
10.1016/j.mssp.2003.12.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated the effect of annealing temperature on the structural morphology of ZnO thin films deposited on SiO2 substrate by the RF magnetron sputtering method. We have used X-ray diffraction, scanning electron microscopy, and atomic force microscopy and have revealed that the grain size and surface roughness tends to increase and the c-axis orientation of ZnO thin film is enhanced by increasing the annealing temperature. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1 / 6
页数:6
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