ZnO growth on Si by radical source MBE

被引：127

作者：

Iwata, K

Fons, P

Niki, S

Yamada, A

Matsubara, K

Nakahara, K

Tanabe, T

Takasu, H

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Rohm Co Ltd, Ukyo Ku, Kyoto 6158585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnO; zinc oxide; Si substrate; MBE; PL; exciton;

D O I：

10.1016/S0022-0248(00)00057-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(1 1 1) has been carried out using NH, plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emission around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 x 10(18) cm(-3). (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：50 / 54

页数：5

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