Spectroscopic identification of the SiO2 complex in oxygen-implanted GaAs:Si

被引：2

作者：

Alt, HC ^{[1
]}

Mussig, H ^{[1
]}

Brugger, H ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSZENTRUM ULM,D-89013 ULM,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.79.1074

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Oxygen-implanted and annealed GaAs:Si epitaxial layers have been investigated by low-temperature Fourier transform infrared absorption spectroscopy. Several new local vibrational modes are observed in the range from 614 to 641 cm(-1). Isotope shifts and splittings allow the unambiguous chemical identification of the defect involved as SiO2. A microscopic structure model is developed which provides, based upon a simple fit, the correct vibrational frequencies. Evidence is presented that deep levels associated with this complex are causing the high sheet resistance of the layers.

引用

页码：1074 / 1077

页数：4

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