Enhanced carrier multiplication in engineered quasi-type-II quantum dots

被引：148

作者：

Cirloganu, Claudiu M. ^{[1
]}

Padilha, Lazaro A. ^{[1
]}

Lin, Qianglu ^{[2
]}

Makarov, Nikolay S. ^{[1
]}

Velizhanin, Kirill A. ^{[1
]}

Luo, Hongmei ^{[2
]}

Robel, Istvan ^{[1
]}

Pietryga, Jeffrey M. ^{[1
]}

Klimov, Victor I. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Ctr Adv Solar Photophys, Los Alamos, NM 87544 USA

[2] New Mexico State Univ, Dept Chem Engn, Las Cruces, NM 88003 USA

来源：

NATURE COMMUNICATIONS | 2014年 / 5卷

关键词：

MULTIPLE EXCITON GENERATION; SEMICONDUCTOR NANOCRYSTALS; SOLAR-CELLS; AUGER RECOMBINATION; EFFICIENCY; PBSE; YIELDS; LIMITS;

D O I：

10.1038/ncomms5148

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core.

引用

页数：8

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