Amplified luminescence and threshold current temperature dependencies of ZnSe and GaN laser diodes

被引：9

作者：

Burov, LI

Ryabtsev, GI

Smal, AS

Waraxe, IN

机构：

[1] Natl Acad Sci, BI Stepanov Inst Phys, Minsk 220072, BELARUS

[2] Belarusian State Univ, Minsk 220050, BELARUS

[3] Brest State Tech Univ, Brest 224017, BELARUS

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2002年 / 75卷 / 01期

关键词：

D O I：

10.1007/s00340-002-0930-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using a transfer equation approach, it is shown that the cavity-trapped amplified luminescence (AL) flux densities S integrated over the frequency and cavity length at the threshold of ZnSe, zinc-blende and wurtzite GaN laser diodes (LDs) with stripe-geometry bulk active layers reach (3.5-9) x 104 MW/m(2) within the temperature range 200-400 K. At these values of,S, the nonlinear optical effects induced by AL can be observed. The AL induced recombination can enhance the threshold current density of the short wavelength LDs by two or even three times.

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收藏

页码：63 / 66

页数：4

相关论文

共 25 条

[1] GAIN NONLINEARITY AND ITS TEMPERATURE-DEPENDENCE IN BULK AND QUANTUM-WELL QUATERNARY LASERS [J].

BERNUSSI, AA ;

TEMKIN, H ;

COBLENTZ, DL ;

LOGAN, RA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (04) :348-350

[2] Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes [J].

Bour, DP ;

Kneissl, M ;

Romano, LT ;

Donaldson, RM ;

Dunnrowicz, CJ ;

Johnson, NM ;

Evans, GA .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :404-406

[3] Effect of amplified luminescence on the lasing threshold of long-wavelength injection lasers [J].

Burov, LI ;

Varaksa, IN ;

Voitikov, SV ;

Kramar, MI ;

Ryabtsev, AG ;

Ryabtsev, GI .

QUANTUM ELECTRONICS, 2002, 32 (03) :260-263

[4] Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes [J].

Burov, LI ;

Gribkovskii, VP ;

Grigelevich, PS ;

Kramar, MI ;

Ryabtsev, GI ;

Shore, KA ;

Voitikov, SV ;

Kragler, R .

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2001, 14 (04) :331-343

[5] AMPLIFIED SPONTANEOUS EMISSION AND CARRIER PINNING IN LASER-DIODES [J].

CHUANG, SL ;

OGORMAN, J ;

LEVI, AFJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1631-1639

[6] The rate of radiative recombination in the nitride semiconductors and alloys [J].

Dmitriev, A ;

Oruzheinikov, A .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) :3241-3246

[7] TRAPPED RADIATION IN INJECTION-LASERS [J].

GRIBKOVSKII, VP ;

KONONENKO, VK ;

RYABTSEV, GI ;

SAMOILYUKOVICH, VA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (06) :322-326

[8] INJECTION-LASERS [J].

GRIBKOVSKII, VP .

PROGRESS IN QUANTUM ELECTRONICS, 1995, 19 (01) :41-88

[9]

GRIBKOVSKII VP, 1977, J APPL SPECTROSC, V27, P1264

[10]

HAHN B, 1998, UNTERSUCHUNG MOVPE 2