GAIN NONLINEARITY AND ITS TEMPERATURE-DEPENDENCE IN BULK AND QUANTUM-WELL QUATERNARY LASERS

被引:11
作者
BERNUSSI, AA [1 ]
TEMKIN, H [1 ]
COBLENTZ, DL [1 ]
LOGAN, RA [1 ]
机构
[1] AT&T BELL LABS,DEPT ELECT ENGN,MURRAY HILL,NJ 07974
基金
巴西圣保罗研究基金会;
关键词
D O I
10.1109/68.376798
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spectrally resolved measurements of unclamped spontaneous emission above threshold in 1.3 mum InGaAsP bulk double heterostructure and compressively strained multiquantum-well lasers are analyzed using steady state rate equations. Both types of structures are characterized by nonlinear gain coefficients in the range of (2.7 - 3.0) x 10(-17) cm3 at 20-degrees-C. The nonlinear gain coefficient decreases with increasing temperature due to thermionic emission of carriers out of the active region and decreasing differential gain. The former effect was found to be more pronounced in quantum-well lasers. Excellent agreement with the rate equation based model is obtained.
引用
收藏
页码:348 / 350
页数:3
相关论文
共 14 条
  • [1] ACKERMAN DA, 1994, SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS, P466, DOI 10.1109/ICIPRM.1994.328271
  • [2] EFFECT OF THERMIONIC ELECTRON-EMISSION FROM THE ACTIVE LAYER ON THE INTERNAL QUANTUM EFFICIENCY OF INGAASP LASERS OPERATING AT 1.3 MU-M
    ANDREKSON, PA
    KAZARINOV, RF
    OLSSON, NA
    TANBUNEK, T
    LOGAN, RA
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 219 - 221
  • [3] BERNUSSI AA, IN PRESS APPL PHYS L
  • [4] STRAINED MULTIPLE QUANTUM-WELL LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    COBLENTZ, D
    TANBUNEK, T
    LOGAN, RA
    SERGENT, AM
    CHU, SNG
    DAVISSON, PS
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (04) : 405 - 407
  • [5] HIGH-SPEED DYNAMICS IN INP BASED MULTIPLE QUANTUM-WELL LASERS
    FUKUSHIMA, T
    NAGARAJAN, R
    ISHIKAWA, M
    BOWERS, JE
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1A): : 70 - 83
  • [6] DETERMINATION OF NONLINEAR GAIN COEFFICIENT OF SEMICONDUCTOR-LASERS FROM ABOVE-THRESHOLD SPONTANEOUS EMISSION MEASUREMENT
    GIRARDIN, F
    DUAN, GH
    CHABRAN, C
    GALLION, P
    BLEZ, M
    ALLOVON, M
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (08) : 894 - 896
  • [7] ABSORPTION, EMISSION, AND GAIN SPECTRA OF 1.3-MU-M INGAASP QUATERNARY LASERS
    HENRY, CH
    LOGAN, RA
    TEMKIN, H
    MERRITT, FR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 941 - 946
  • [8] CARRIER CAPTURE TIME AND ITS EFFECTS ON THE EFFICIENCY OF QUANTUM-WELL LASERS
    HIRAYAMA, H
    YOSHIDA, J
    MIYAKE, Y
    ASADA, M
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (01) : 54 - 62
  • [9] GAIN AND SATURATION IN SEMICONDUCTOR-LASERS
    HUANG, J
    CASPERSON, LW
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 1993, 25 (06) : 369 - 390
  • [10] BAND-STRUCTURE ENGINEERING IN STRAINED SEMICONDUCTOR-LASERS
    OREILLY, EP
    ADAMS, AR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 366 - 379