Chemically exfoliated single-layer MoS2: Stability, lattice dynamics, and catalytic adsorption from first principles

被引:199
作者
Calandra, Matteo [1 ]
机构
[1] Univ Paris 06, IMPMC, CNRS, UMR7590, F-75005 Paris, France
关键词
MOLECULAR LAYERS; NANOSHEETS;
D O I
10.1103/PhysRevB.88.245428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemically and mechanically exfoliated MoS2 single-layer samples have substantially different properties. While mechanically exfoliated single-layers are monophase(1H polytype with Mo in trigonal prismatic coordination), the chemically exfoliated samples show coexistence of three different phases, 1H, 1T (Mo in octahedral coordination), and 1T' (a distorted 2 x 1 1T superstructure). By using first-principles calculations, we investigate the energetics and the dynamical stability of the three phases. We show that the 1H phase is the most stable one, while the metallic 1T phase, strongly unstable, undergoes a phase transition towards a metastable and insulating 1T' structure composed of separated zigzag chains. We calculate electronic structure, phonon dispersion, Raman frequencies, and intensities for the 1T' structure. We provide a microscopical description of the J(1), J(2), and J(3) Raman features that were first detected more than 20 years ago but have remained unexplained up to now. Finally, we show that H adsorbates, which are naturally present at the end of the chemical exfoliation process, stabilize the 1T' over the 1H one.
引用
收藏
页数:6
相关论文
共 25 条
[11]  
Fuhrer MS, 2013, NAT NANOTECHNOL, V8, P146, DOI 10.1038/nnano.2013.30
[12]   QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials [J].
Giannozzi, Paolo ;
Baroni, Stefano ;
Bonini, Nicola ;
Calandra, Matteo ;
Car, Roberto ;
Cavazzoni, Carlo ;
Ceresoli, Davide ;
Chiarotti, Guido L. ;
Cococcioni, Matteo ;
Dabo, Ismaila ;
Dal Corso, Andrea ;
de Gironcoli, Stefano ;
Fabris, Stefano ;
Fratesi, Guido ;
Gebauer, Ralph ;
Gerstmann, Uwe ;
Gougoussis, Christos ;
Kokalj, Anton ;
Lazzeri, Michele ;
Martin-Samos, Layla ;
Marzari, Nicola ;
Mauri, Francesco ;
Mazzarello, Riccardo ;
Paolini, Stefano ;
Pasquarello, Alfredo ;
Paulatto, Lorenzo ;
Sbraccia, Carlo ;
Scandolo, Sandro ;
Sclauzero, Gabriele ;
Seitsonen, Ari P. ;
Smogunov, Alexander ;
Umari, Paolo ;
Wentzcovitch, Renata M. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (39)
[13]   SINGLE-LAYER MOS2 [J].
JOENSEN, P ;
FRINDT, RF ;
MORRISON, SR .
MATERIALS RESEARCH BULLETIN, 1986, 21 (04) :457-461
[14]   Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping [J].
Komsa, Hannu-Pekka ;
Kotakoski, Jani ;
Kurasch, Simon ;
Lehtinen, Ossi ;
Kaiser, Ute ;
Krasheninnikov, Arkady V. .
PHYSICAL REVIEW LETTERS, 2012, 109 (03)
[15]   Anomalous Lattice Vibrations of Single- and Few-Layer MoS2 [J].
Lee, Changgu ;
Yan, Hugen ;
Brus, Louis E. ;
Heinz, Tony F. ;
Hone, James ;
Ryu, Sunmin .
ACS NANO, 2010, 4 (05) :2695-2700
[16]  
Lin Y.-C., ARXIV13102363
[17]   Two-dimensional atomic crystals [J].
Novoselov, KS ;
Jiang, D ;
Schedin, F ;
Booth, TJ ;
Khotkevich, VV ;
Morozov, SV ;
Geim, AK .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (30) :10451-10453
[18]  
Perdew JP, 1997, PHYS REV LETT, V78, P1396, DOI 10.1103/PhysRevLett.77.3865
[19]   Measurement of mobility in dual-gated MoS2 transistors [J].
Radisavljevic, B. ;
Kis, A. .
NATURE NANOTECHNOLOGY, 2013, 8 (03) :147-148
[20]   Single-layer MoS2 transistors [J].
Radisavljevic, B. ;
Radenovic, A. ;
Brivio, J. ;
Giacometti, V. ;
Kis, A. .
NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150