Measurement of mobility in dual-gated MoS2 transistors

被引：103

作者：

Radisavljevic, B. ^{[1
]}

Kis, A. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Elect Engn, CH-1015 Lausanne, Switzerland

来源：

NATURE NANOTECHNOLOGY | 2013年 / 8卷 / 03期

关键词：

D O I：

10.1038/nnano.2013.31

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：147 / 148

页数：2

共 6 条

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