Coplanar millimeter-wave IC's for W-band applications using 0.15 mu m pseudomorphic MODFET's

被引：24

作者：

Schlechtweg, M ^{[1
]}

Haydl, WH ^{[1
]}

Bangert, A ^{[1
]}

Braunstein, J ^{[1
]}

Tasker, PJ ^{[1
]}

Verweyen, L ^{[1
]}

Massler, H ^{[1
]}

Bronner, W ^{[1
]}

Hulsmann, A ^{[1
]}

Kohler, K ^{[1
]}

机构：

[1] UNIV WALES COLL CARDIFF, SCH ENGN, CARDIFF CF1 3NS, S GLAM, WALES

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 10期

关键词：

D O I：

10.1109/4.540051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A small signal S-parameter and noise model for the cascode MODFET has been validated up to 120 GHz, allowing predictable monolithic microwave integrated circuit (MMIC) design up to W-band, The potential of coplanar waveguide technology to build compact, high performance system modules is demonstrated by means of passive and active MMIC components, The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler, For both building blocks, very good agreement between the measured and modeled data is achieved up to 120 GHz, Based on the accurate design database, two versions of compact integrated amplifiers utilizing cascode devices for application in the 90-120 GHz frequency range were designed and fabricated, The MMIC's have 26.3 dB and 20 dB gain at 91 GHz and 110 GHz, respectively, A noise figure of 6.4 dB was measured at 110 GHz, The 90-100 GHz amplifier was integrated with an MMIC tunable oscillator resulting in a W-band source delivering more than 6 dBm output power from 94 to 98 GHz.

引用

页码：1426 / 1434

页数：9

共 24 条

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