Effects of charged self-assembled quantum dots on two-dimensional quantum transport

被引：15

作者：

Wang, Q ^{[1
]}

Carlsson, N ^{[1
]}

Omling, P ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

Xu, HQ ^{[1
]}

机构：

[1] Univ Lund, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a layer of InAs quantum dots on the transport properties of a nearby two-dimensional electron gas (2DEG) in an InGaAs/InP quantum well is investigated. The probability of the scattering between edge states is found to increase as the distance between the layer of the dots and the 2DEG decreases. It is shown that Coulomb scattering by electrons in the charged quantum dots play an important role in the scattering between edge states. An effect of the electrons in the dots is to mediate scattering between spin-split edge states. This is demonstrated by showing that the overshoot effect in the quantum Hall regime is only present when the dots are charged with electrons. (C) 2000 American Institute of Physics. [S0003-6951(00)01113-X].

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页码：1704 / 1706

页数：3

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