Improved solar-blind external quantum efficiency of back-illuminated AlxGa1-xN heterojunction pin photodiodes

被引：24

作者：

Collins, CJ ^{[1
]}

Chowdhury, U ^{[1
]}

Wong, MM ^{[1
]}

Yang, B ^{[1
]}

Beck, AL ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 15期

关键词：

D O I：

10.1049/el:20020526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improved external quantum efficiency for AlxGa1-xN solar-blind pin photodiodes is reported. The zero-bias external quantum efficiency was 53% (R-Z = 0.12 A/W) at 275 nm, and increased to 58% (R-Z = 0.13 A/W) at a reverse bias of 5 V In addition, the photodiodes exhibited a low dark current density of 8.2 x 10(-11) A/cm(2) at a reverse bias of 5 V, which resulted in a large differential resistance. The high zero-bias responsivity and large differential resistance combine to yield a high detectivity of D* similar to 3.0 x 10(14) cm.Hz(1/2).W-1. These results are attributed to an improved Al0.6Ga0.4N window n-region.

引用

页码：824 / 826

页数：3

共 18 条

[1]

Campbell JC, 2001, PHYS STATUS SOLIDI A, V188, P283, DOI 10.1002/1521-396X(200111)188:1<283::AID-PSSA283>3.0.CO

[2]

2-H

[3]

Collin G, 2000, CFI-CERAM FORUM INT, V77, P28

[4] Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode [J].

Collins, CJ ;

Li, T ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC ;

Carrano, JC ;

Schurman, MJ ;

Ferguson, IA .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2138-2140

[5] Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode [J].

Collins, CJ ;

Chowdhury, U ;

Wong, MM ;

Yang, B ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3754-3756

[6]

Donati S., 2000, Photodetectors: Devices, Circuits and Applications, V2nd ed.

[7]

DUPUIS RD, 2002, IN RPESS WIDE ENERGY

[8] Microscopic investigation of Al0.43Ga0.57N on sapphire [J].

Kashima, T ;

Nakamura, R ;

Iwaya, M ;

Katoh, H ;

Yamaguchi, S ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (12B) :L1515-L1518

[9] Back illuminated AlGaN solar-blind photodetectors [J].

Lambert, DJH ;

Wong, MM ;

Chowdhury, U ;

Collins, C ;

Li, T ;

Kwon, HK ;

Shelton, BS ;

Zhu, TG ;

Campbell, JC ;

Dupuis, RD .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1900-1902

[10] Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors [J].

Li, T ;

Lambert, DJH ;

Wong, MM ;

Collins, CJ ;

Yang, B ;

Beck, AL ;

Chowdhury, U ;

Dupuis, RD ;

Campbell, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (04) :538-545

← 1 2 →