Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

被引:36
作者
Gosálvez, MA [1 ]
Foster, AS [1 ]
Nieminen, RM [1 ]
机构
[1] Helsinki Univ Technol, Phys Lab, Espoo 02015, Finland
基金
芬兰科学院;
关键词
anisotropic wet chemical etching; cellular automaton; surface coverage; surface termination; surface morphology; mask; convex corner; silicon;
D O I
10.1016/S0169-4332(02)00903-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on Surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage. including the dependence of the fastest-etched plane orientation, is implicitly contained in the model and predictions of convex corner under-etching structures are made. We show that the whole etching process is controlled by only a few surface configurations involving a particular type of next-nearest neighbours. The relative value of the removal probabilities of these configurations determines the balance in the occurrence of step propagation and etch pitting for all surface orientations. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:160 / 182
页数:23
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