Demonstration of widely tunable single-chip 10-Gb/s laser-modulators using multiple-bandgap InGaAsP quantum-well intermixing

被引：14

作者：

Raring, JW ^{[1
]}

Skogen, EJ ^{[1
]}

Johansson, LA ^{[1
]}

Sysak, MN ^{[1
]}

Barton, JS ^{[1
]}

Masanoviæ, ML ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 07期

关键词：

electroabsorption modulators (EAMs); ion implantation; laser tuning; quantum-well intermixing (QWI); semiconductor lasers; wavelength-division multiplexing;

D O I：

10.1109/LPT.2004.828853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed wavelength-agile laser-modulators were fabricated for the first time using a quantum-well intermixing processing platform for monolithic integration. Over 19-GHz 3-dB modulator bandwidth was achieved and 10-Gb/s error-free transmission was demonstrated through 75 km of standard fiber.

引用

页码：1613 / 1615

页数：3

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