Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators

被引：38

作者：

Skogen, EJ ^{[1
]}

Raring, JW

Barton, JS

DenBaars, SP

Coldren, LA

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 05期

关键词：

ion implantation; laser tuning; semiconductor lasers; wavelength-division multiplexing;

D O I：

10.1109/JSTQE.2003.819491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a quantum-well intermixing process for the monolithic integration of various devices, each with a unique band edge. The process involves a single ion implant followed by multiple etch and anneal cycles. We have applied this method to design and fabricate widely tunable sampled-grating distributed Bragg reflector lasers with integrated electroabsorption modulators. The devices employ three unique band edges, and demonstrate exceptional tuning, gain, and absorption characteristics.

引用

页码：1183 / 1190

页数：8

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