Photonic integrated circuits fabricated using ion implantation

被引：110

作者：

Charbonneau, S ^{[1
]}

Koteles, ES

Poole, PJ

He, JJ

Aers, GC

Haysom, J

Buchanan, M

Feng, Y

Delage, A

Yang, F

Davies, M

Goldberg, RD

Piva, PG

Mitchell, IV

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Univ Western Ontario, Dept Phys, London, ON N6A 3K7, Canada

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 04期

关键词：

annealing; diffusion processes; interdiffusion processes; quantum wells; semiconductor devices;

D O I：

10.1109/2944.720491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally results in an increase in the bandgap energy and is accompanied by changes in the refractive index. A technique, based on ion implantation-induced QW intermixing, has been developed to enhance the quantum-well intermixing (QWI) rate in selected areas of a wafer. Such processes offer the prospect of a powerful and simple fabrication route for the integration of discrete optoelectronic devices and for forming photonic integrated circuits.

引用

页码：772 / 793

页数：22

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