Ion implantation damage of InP and InGaAs

被引：15

作者：

Akano, UG ^{[1
]}

Mitchell, IV ^{[1
]}

Shepherd, FR ^{[1
]}

Miner, CJ ^{[1
]}

机构：

[1] BELL NO RES LTD, OTTAWA, ON K1Y 4H7, CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 106卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)00724-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The damage accumulation and annealing processes in ion bombarded InP and InGaAs have been studied. Epitaxial InGaAs layers on (100) oriented InP and InP crystals were implanted with O-16 ions to produce a R(p) of 0.5 mu m in each material for ion doses from 10(13) to 2X10(16) cm(-2), implant temperature from 80 to 373 K, and beam flux from 0.01 to 1.8 mu A cm(-2). The retained damage following implantation was analyzed by the Rutherford backscattering/channeling technique. The results show that the response of each material to O ion bombardment is widely different for all implantation temperatures. Within the flux range studied, amorphous layers can be formed in InP at all temperatures up to 373 K for O-16 fluences greater than or equal to 5X10(14) cm(-2). Strong dynamic defect annealing precludes amorphization of InGaAs at 290 K for O doses up to 5X10(15) cm(-2) and beam flux up to 1.8 mu A cm(-2).

引用

页码：308 / 312

页数：5

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