THE EFFECT OF IMPLANT TEMPERATURE AND BEAM FLUX ON DAMAGE ACCUMULATION AND SI ACTIVATION OF SI-IMPLANTED INP

Ion implantation-induced disorder accumulation in Si-implanted InP crystals and the effect of the disorder accumulation on the subsequent electrical activation of the implanted Si have been studied as functions of the Si dose, flux, and implant temperature. InP crystals with (100) orientation were implanted at 80-423 K with 600 keV Si ions at a beam flux of 0.005-1.0 muA cm-2 and to total fluences of between 5 x 10(12) and 2 x 10(14) Si cm-2. The residual displacement damage following implantation was analyzed by the Rutherford backscattering/channeling technique. Electrical activation of the implanted Si was studied using Hall-effect measurements. The results show that for implant temperatures T greater-than-or-equal-to 295 K the displaced atom density, N(d), exhibits a power law dependence on J:N(d) = alphaJ(n), with the value of n dependent on both the total ion dose and implant temperature. At 295 K and Si doses of 1-4 x 10(13) cm-2 the value of n varies from 0.23 to 0.15. The transition from the crystalline to amorphous state is influenced significantly by the implant temperature. For implant temperatures greater-than-or-equal-to 400 K, no amorphous state can be produced in InP for Si doses less-than-or-equal-to 6 x 10(13) and Si fluxes less-than-or-equal-to 1 muA cm-2. A combination of low beam flux and elevated temperature implantation may be advantageous for the electrical activation of the implanted Si.